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AOTF470 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOTF470 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. -RoHs Compliant
Features
VDS (V) = 75V ID= 50 A (VGS= 10V) RDS(ON) < 11.5m (VGS = 10V)
D
GDS
AOTF470 TO-220F
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
C C C
AOTF470 75 25 50 36 200 45 300 54 27 -55 to 175
Units V V A A mJ W C
TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG
Repetitive avalanche energy L=0.3mH Power Dissipation B
TC=25C TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case B
A
Symbol RJA RJC
AOTF470 60 2.8
Units C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF470
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=250uA, VGS=0V VDS=60V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C 2 200 9.8 16.0 90 0.7 1 20 4700 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 400 180 3 114 VGS=10V, VDS=30V, ID=30A 33 18 21 VGS=10V, VDS=30V, RL=1, RGEN=3 IF=30A, dI/dt=100A/s 39 70 24 53 143 70 4.5 140 5640 11.5 19.0 2.7 Min 75 1 5 1 4 Typ Max Units V A uA V A m S V A pF pF pF nC nC nC ns ns ns ns ns nC
VDS=5V, ID=50A Transconductance Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s
A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev0: Feb. 2009
Derate above 25 C
o
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF470
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250 10V 200 8V 6V 150 ID (A) ID(A) 60 125C 40 25C 50 VGS=4.5V 0 0 2 4 6 8 10 VDS (Volts) Figure 1: On-Region Characteristics 13 12 11 RDS(ON) (m) 10 VGS=10V 9 8 7 6 0 20 40 60 80 100 0.6 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 ID=30A 25 20 RDS(ON) (m) 15 10 25C 5 1.0E-04 0 4 12 16 20 VGS (Volts) AOT430 Figure 5: On-Resistance vs. Gate-Source Voltage 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0E-03 -40C -25 0 25 50 75 100 125 150 175 Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 VGS=10V, 30A 0 3 3.5 4 4.5 5 5.5 6 20 -40C 80 VDS=5V 100
100
5.5V
VGS(Volts) Figure 2: Transfer Characteristics
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 125C IS (A) 1.0E+00 1.0E-01 1.0E-02
Derate above 25oC
125C
25C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF470
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=30V ID=30A Capacitance (nF) 1 Coss Crss 0.1 10 Ciss
8
VGS (Volts)
6
4
2
0 0 40 80 120 Qg (nC) Figure 7: Gate-Charge Characteristics
0.01 0 10 VDS (Volts) Figure 8: Capacitance Characteristics 1 100
ID(A), Peak Avalanche Current
150 125 100 75 50 25 0 0.000001
TA=150C TA=25C
0.00001
0.0001
0.001
Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF470
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 10: Current De-rating (Note B) Power Dissipation (W) Current rating ID(A) 50 40 30 20 10 0 0 25 75 100 125 150 TCASE (C) Figure 11: Power De-rating (Note B) 50 175
1000 100
ID (Amps)
TJ(Max)=175C, TA=25C 10s 100s
10 1
RDS(ON) limited D
1ms 10ms 100ms 1s 10s
0.1 0.1 1 10 100 1000
VDS (Volts) Figure 12: Maximum Forward Biased Safe Operating Area (Note F)
10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=2.8C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1
0.01
Single Pulse
T 10 100
Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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